Electron charging and discharging in amorphous silicon quantum dots embedded in silicon nitride
نویسندگان
چکیده
Electron charging and discharging were produced in metal-insulator-semiconductor structures containing amorphous silicon quantum dots ~a-Si QDs! by increasing the applied voltage in a stepwise fashion without changing its sign. The metal-insulator-semiconductor structure was fabricated using an insulating silicon nitride film containing a-Si QDs by plasma-enhanced chemical vapor deposition. This charging behavior suggests that a-Si QDs in the silicon nitride are positively charged due to nitrogen dangling bonds. The surface state of the a-Si QDs is considered to play a dominant role in the charging properties such as electron storage and charge-loss rate in the a-Si QDs. © 2002 American Institute of Physics. @DOI: 10.1063/1.1497444#
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